Device Dynamics Lab
Dynamic test
Charge trapping is affected by the testing environment. Conventional DC and pulse tests often fall short in replicating real-world conditions, which include rapid gate switching, high voltage stress, and hot carrier injection. These dynamic factors result in greater stress and increased charge trapping, leading to higher threshold voltages (Vth), reduced current ratings, and lower efficiency.
For a comprehensive assessment and improvement of device performance, dynamic testing is essential.
DDA8010 DDRA8010 WPDDA6505 Power/RF
- First platform worldwide for measuring dynamic Rdson, Vth, Vsd, and reliability of GaN devices beyond JEDEC standards.
- Supports up to 800V stress, 500kHz switching frequency, and 10A current.
- Offers both hard and soft switching 2VS.
- Accepted by major Taiwanese foundries.
- Provides on-wafer solutions with built-in inline functions including 2μs pulse IV.
- Compatible with both power and RF GaN devices.
